Al F. Tasch : rechercher sur Z-Library

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1

Metal Oxide Semiconductor Technology Scaling Issues And Their Relation To Submicron Lithography

Tasch, Jr., Al F.

Journal:

Optical Engineering

Année:

1983

Langue:

english

Fichier:

PDF, 161 KB

english, 1983

2

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Wei-Kai Shih, Everett X. Wang, Srinivas Jallepalli, Francisco Leon, Christine M. Maziar, Al F. Tasch Jr.

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 536 KB

english, 1998

3

Channeling control for large tilt angle implantation in Si 〈100〉

Robert B. Simonton, Dennis E. Kamenitsa, Andrew M. Ray, Changhae Park, Kevin M. Klein, Al F. Tasch

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1991

Langue:

english

Fichier:

PDF, 650 KB

english, 1991

4

A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Di Li, Geng Wang, Yang Chen, Li Lin, Gaurav Shrivastav, Stimit Oak, Al Tasch, Sanjay Banerjee, Borna Obradovic

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2001

Langue:

english

Fichier:

PDF, 635 KB

english, 2001

5

An Improved Approach to Accurately Model Shallow B and BF[sub 2] Implants in Silicon

Journal:

Journal of The Electrochemical Society

Année:

1989

Langue:

english

Fichier:

PDF, 530 KB

english, 1989

6

4591891 Post-metal electron beam programmable MOS read only memory

PallabK Chatterjee, Al Tasch

Journal:

Microelectronics Reliability

Année:

1987

Langue:

english

Fichier:

PDF, 79 KB

english, 1987

7

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Changhae Park, Kevin M. Klein, Al F. Tasch

Journal:

Solid-State Electronics

Année:

1990

Langue:

english

Fichier:

PDF, 485 KB

english, 1990

8

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Di Li, Geng Wang, Yang Chen, Li Lin, Gaurav Shrivastav, Stimit Oak, Al F. Tasch, Sanjay K. Banerjee

Journal:

Journal of Computational Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 451 KB

english, 2002

9

Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Yang Chen, Di Li, Geng Wang, Li Lin, Stimit Oak, Gaurav Shrivastav, Al F. Tasch, Sanjay K. Banerjee

Journal:

Journal of Computational Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 206 KB

english, 2002

10

An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) silicon

Shyh-Horng Yang, Steven J. Morris, David L. Lim, Al F. Tasch, Robert B. Simonton, Dennis Kamenitsa, Charles Magee, Gayle Lux

Journal:

Journal of Electronic Materials

Année:

1994

Langue:

english

Fichier:

PDF, 859 KB

english, 1994

11

Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: Phase transformation and electrical characteristics

Vinay Chikarmane, Jiyoung Kim, Chandra Sudhama, Jack Lee, Al Tasch, Steve Novak

Journal:

Journal of Electronic Materials

Année:

1992

Langue:

english

Fichier:

PDF, 2.34 MB

english, 1992

12

Modeling of cumulative damage effects on ion-implantation profiles

Kevin M. Klein, Changhae Park, Al F. Tasch

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1991

Langue:

english

Fichier:

PDF, 478 KB

english, 1991

13

Boron implant profile variation across a single wafer due to electrostatic scanning

Changhae Park, Kevin M. Klein, Al F. Tasch, Robert B. Simonton, Dennis E. Kamenitsa, Steve Novak

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1991

Langue:

english

Fichier:

PDF, 467 KB

english, 1991

14

Ion implantation in future MOS technology

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 458 KB

english, 1993

15

High Miller index channeling in silicon substrates

Robert B. Simonton, Charles W. Magee, Al F. Tasch

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 428 KB

english, 1993

16

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.

Journal:

IEEE Transactions on Electron Devices

Année:

1998

Langue:

english

Fichier:

PDF, 126 KB

english, 1998

17

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Wednesday 1 October 1997)] Microelectronic Device Technology - Computationally efficient ion implantation damage model: modified Kinchin-Pease model

Wang, Geng, Tian, Shiyang, Morris, Michael F., Morris, Steven J., Obradovic, Borna J., Balamurugan, Ganesh, Tasch, Jr., Al F., Rodder, Mark, Tsuchiya, Toshiaki, Burnett, David, Wristers, Dirk

Année:

1997

Langue:

english

Fichier:

PDF, 415 KB

english, 1997

18

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

Chen, Y., Morris, M.F., Obradovic, B., Li, D., Tasch, Al.F., Swinnea, J.S.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2000

Langue:

english

Fichier:

PDF, 358 KB

english, 2000

19

SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap

Chen, Xiangdong, Ouyang, Qiqing, Onsongo, David M., Jayanarayanan, Sankaran Kartik, Tasch, Al, Banerjee, Sanjay

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 414 KB

english, 2000

20

Simulation program suitable for hot carrier studies: An efficient multiband Monte Carlo model using both full and analytic band structure description for silicon

Wang, Xiaolin, Chandramouli, V., Maziar, Christine M., Tasch, Al F.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 1.30 MB

english, 1993

21

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - An electronic stopping power model for Monte Carlo and molecular dynamics simulation of ion implantation into silicon

Cai, D., Gronbech-Jensen, N., Snell, C.M., Beardmore, K.M., Tasch, Al.F., Morris, S.

Année:

1997

Langue:

english

Fichier:

PDF, 430 KB

english, 1997

22

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Monte Carlo simulation of consecutive implants into SiO/sub 2/ capped Si

Di Li,, Shyh-Horng Yang,, Machala, C., Li Lin,, Tasch, Al.F., Hornung, B., Li-Fatou, A., Banerjee, S.K.

Année:

2002

Langue:

english

Fichier:

PDF, 201 KB

english, 2002

23

A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Park, Changhae, Klein, Kevin M., Tasch, Al F., Simonton, Robert B., Novak, Steve, Lux, Gayle

Journal:

COMPEL Int J for Computation and Maths in Electrical and Electronic Eng

Année:

1991

Langue:

english

Fichier:

PDF, 382 KB

english, 1991

24

SPIE Proceedings [SPIE Microelectronic Manufacturing '95 - Austin, TX, United States (Wednesday 25 October 1995)] Microelectronic Manufacturing Yield, Reliability, and Failure Analysis - Degradation of thin Si0 2 sidewall spacers during selective epitaxial growth for the fabrication of raised source/drain MOSFETs

Unnikrishnan, Sreenath, Kim, Byeong Y., Wang, Chun-Lin, Wu, Yun-Kang, Kwong, Dim-Lee, Tasch, Al F.

Année:

1995

Langue:

english

Fichier:

PDF, 513 KB

english, 1995

25

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON

Journal:

COMPEL Int J for Computation and Maths in Electrical and Electronic Eng

Année:

1992

Langue:

english

Fichier:

PDF, 434 KB

english, 1992

26

The Detailed Variation of Boron and Fluorine Profiles with Tilt and Rotation Angles for BF2+ ION Implantation in (100) Silicon

Gupta, Puneet, Park, Changhae, Klein, Kevin, Yang, Shyh-horng, Morris, Steve, Do, Vu, Tasch, Al, Simonton, Robert, Lux, Gayle

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 465 KB

english, 1991

27

The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

Chikarmane, Vinay, Kim, Jiyoung, Sudhama, C., Lee, Jack, Tasch, Al, Novak, Steve

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 895 KB

english, 1991

28

The Impact of Device Asymmetry on the Electrical and Reliability Properties of Ferroelectric PZT for Memory Applications

Kim, Jiyoung, Sudhama, C., Chikarmane, Vinay, Khamankar, Rajesh, Lee, Jack, Tasch, Al

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 430 KB

english, 1992

29

A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon

Yang, Shyh-Horng, Lim, David, Morris, Steven J., Tasch, AL F.

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 356 KB

english, 1993

30

A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

Morris, Steven J., Yang, Shyh-Horng, Lim, David H., Tasch, AL. F.

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 301 KB

english, 1993

31

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Benac, Michael J., Cowley, Alan H., Jones, Richard A., Tasch, Al F.

Journal:

Chemistry of Materials

Année:

1989

Langue:

english

Fichier:

PDF, 834 KB

english, 1989

32

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Wednesday 1 October 1997)] Microelectronic Device Technology - Design of 0.18-micron NMOSFETs for low-power applications

Khan, Shamsul A., Hareland, Scott A., Tasch, Jr., Al F., Maziar, Christine M., Zeitzoff, Peter, Rodder, Mark, Tsuchiya, Toshiaki, Burnett, David, Wristers, Dirk

Année:

1997

Langue:

english

Fichier:

PDF, 352 KB

english, 1997

33

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Wednesday 1 October 1997)] Microelectronic Device Technology - Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Obradovic, Borna J., Morris, Steven J., Morris, Michael F., Tian, Shiyang, Wang, Geng, Beardmore, K., Snell, Charles M., Jackson, J., Baummann, S., Tasch, Jr., Al F., Rodder, Mark, Tsuchiya, Toshiaki,

Année:

1997

Langue:

english

Fichier:

PDF, 427 KB

english, 1997

34

SPIE Proceedings [SPIE Microelectronic Manufacturing - Santa Clara, CA (Sunday 20 September 1998)] Microelectronic Device Technology II - Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Obradovic, Borna J., Morris, Steven J., Morris, Michael F., Tian, Shiyang, Wang, Geng, Beardmore, K., Snell, Charles M., Jackson, J., Baummann, S., Tasch, Jr., Al F., Burnett, David, Wristers, Dirk, T

Année:

1998

Langue:

english

Fichier:

PDF, 744 KB

english, 1998

35

SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Tuesday 18 October 1994)] Microelectronics Technology and Process Integration - Analysis and design considerations for manufacturable and reliable 0.18-micron N-MOSFETs

Krishnamurthy, Shyam, Jallepalli, S., Yeap, ChohFei, Hasnat, Khaled, Maziar, Christine M., Tasch, Jr., Al F., Chen, Fusen E., Murarka, Shyam P.

Année:

1994

Langue:

english

Fichier:

PDF, 1.13 MB

english, 1994

36

SPIE Proceedings [SPIE Microelectronic Manufacturing 1996 - Austin, TX (Wednesday 16 October 1996)] Microelectronic Device and Multilevel Interconnection Technology II - Manufacturing sensitivity analysis of a 0.18-micron NMOSFET

Angelo, Darryl, Hareland, Scott A., Khan, Shamsul A., Hasnat, Khaled, Tasch, Jr., Al F., Zeitzoff, Peter, Chen, Ih-Chin, Sasaki, Nobuo, Patel, Divyesh N., Dixit, Girish A.

Année:

1996

Langue:

english

Fichier:

PDF, 459 KB

english, 1996

37

SPIE Proceedings [SPIE 1982 Microlithography Conferences - Santa Clara (Friday 1 January 1982)] Submicron Lithography I - Metal Oxide Semiconductor (MOS) Technology Scaling Issues And Their Relation To Submicron Lithography

Tasch, Jr., Al F., Blais, Phillip D.

Année:

1982

Langue:

english

Fichier:

PDF, 483 KB

english, 1982

38

SPIE Proceedings [SPIE Semi - DL tentative - San Diego, CA (Thursday 1 March 1990)] Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors - Experimental studies of growth kinetics of silicon by remote plasma-enhanced chemical vapor deposition at low temperatures

Anthony, Brian G., Hsu, Ting-Chen, Breaux, Louis H., Qian, Rong Z., Banerjee, Sanjay K., Tasch, Jr., Al F., Madhukar, Anupam

Année:

1990

Langue:

english

Fichier:

PDF, 325 KB

english, 1990

39

SPIE Proceedings [SPIE Microelectronic Manufacturing - Santa Clara, CA (Sunday 20 September 1998)] Microelectronic Device Technology II - Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling

Balamurugan, Ganesh, Obradovic, Borna J., Wang, Geng, Chen, Yidong, Tasch, Al F., Burnett, David, Wristers, Dirk, Tsuchiya, Toshiaki

Année:

1998

Langue:

english

Fichier:

PDF, 582 KB

english, 1998

40

Hydrodynamic (HD) Simulation of N -Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

Wang, Haihong, Shih, Wei-Kai, Green, Susan, Hareland, Scott, Maziar, Christine M., Tasch, Al. F.

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 1.95 MB

english, 1998

41

Study of Electron Velocity Overshoot in NMOS Inversion Layers

Shih, Wei-Kai, Jallepalli, Srinivas, Rashed, Mahbub, Maziar, Christine M., Tasch Jr., Al. F.

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 2.08 MB

english, 1998

42

Ion Implantation Technology–92 || Ion implantation in future MOS technology

Année:

1993

Langue:

english

Fichier:

PDF, 1.05 MB

english, 1993

43

HIGH EFFICACY OF VENETOCLAX PLUS OBINUTUZUMAB IN PATIENTS WITH COMPLEX KARYOTYPE (CKT) AND CHRONIC LYMPHOCYTIC LEUKEMIA (CLL): A PROSPECTIVE ANALYSIS FROM THE CLL14 TRIAL

Al-Sawaf, O., Lilienweiss, E., Bahlo, J., Robrecht, S., Fink, A.-M., Patz, M., Tandon, M., Humphrey, K., Jiang, Y., Schary, W. L., Lurà, Porro M., Ritgen, M., Tasch, E., Stilgenbauer, S., Eichhorst, B

Journal:

Année:

2019

Fichier:

PDF, 558 KB

2019